Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates
نویسندگان
چکیده
منابع مشابه
Integration Techniques of pHEMTs and Planar Gunn Diodes on GaAs Substrates
This work presents two different approaches for the implementation of pseudomorphic high electron mobility transistors (pHEMTs) and planar Gunn diodes on the same gallium arsenide substrate. In the first approach, a combined wafer is used where a buffer layer separates the active layers of the two devices. A second approach was also examined using a single wafer where the AlGaAs/InGaAs/GaAs het...
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When biased on the negative differential resistance regime, electroluminescence (EL) is emitted from planar GaAs heterostructure Gunn diodes due to the recombination of electrons in the device channel with holes that are generated by impact ionisation when the Gunn domains reach the anode edge. This EL forms non-uniform patterns whose intensity shows short-range intensity variations in the dire...
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GaAs PHEMTs are broadly used in RF power applications for wireless systems. A major concern with these devices is their gradual degradation as a result of prolonged biasing at high voltages. Previous research has identified the drain side of the device as the region that sustains most of the damage [1], but other mechanisms involving charge modulation under the gate [2] have also been reported....
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2014
ISSN: 0038-1101
DOI: 10.1016/j.sse.2014.06.006